Integrated Silicon Solution, Inc. Memory IS61WV25616FALL-10TLI-TR

Description
IC SRAM 4MBIT PAR
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Description
IC SRAM 4MBIT PAR
Request a Quote
Datasheet
Datasheet Summary
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The IS61WV25616FALL-10TLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 4M bits, organized as 256K words by 16 bits. It features access times of 10 ns, with a maximum active current of 35 mA and a standby current of 10 mA, making it suitable for low-power applications. The device operates on a single power supply voltage ranging from 1.65V to 2.2V. It supports three-state outputs and includes data control for upper and lower bytes, allowing for flexible data handling. The memory is designed for both industrial and automotive temperature ranges and is available in lead-free packaging options. The device is packaged in a JEDEC standard 48-ball mini BGA, 44-pin SOJ, and 44-pin TSOP (TYPE II), facilitating easy integration into various designs.

Datasheet Summary
Powered by GS/AI

The IS61WV25616FALL-10TLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 4M bits, organized as 256K words by 16 bits. It features access times of 10 ns, with a maximum active current of 35 mA and a standby current of 10 mA, making it suitable for low-power applications. The device operates on a single power supply voltage ranging from 1.65V to 2.2V. It supports three-state outputs and includes data control for upper and lower bytes, allowing for flexible data handling. The memory is designed for both industrial and automotive temperature ranges and is available in lead-free packaging options. The device is packaged in a JEDEC standard 48-ball mini BGA, 44-pin SOJ, and 44-pin TSOP (TYPE II), facilitating easy integration into various designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS61WV25616FALL-10TLI-TR-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 4MBIT PAR

IC SRAM 4MBIT PAR

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25616FALL-10TLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV25616FALL-10TLI-TR
4Mb,High-Speed/Low Power,Async,2

4Mb,High-Speed/Low Power,Async,2

Supplier's Site
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS61WV25616FALL-10TLI-TR-ND IS61WV25616FALL-10TLI-TR IS61WV25616FALL-10TLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits
Package Type TSOP; "44-TSOP (0.400"", 10.16mm Width)" 44-TSOP (0.400\", 10.16mm Width)
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