The IS61WV25616EDBLL-8BLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 4,194,304 bits, organized as 262,144 words by 16 bits. It features access times of 8 ns and 10 ns, making it suitable for applications requiring fast data retrieval. The device operates on a single power supply ranging from 2.4V to 3.6V, with typical active power consumption of 85 mW and standby power of 7 mW. This memory chip supports fully static operation, eliminating the need for a clock or refresh cycles, which simplifies system design. It includes three-state outputs and allows for data control of upper and lower bytes, enhancing flexibility in data handling. The device is designed to operate within industrial and automotive temperature ranges and is available in lead-free packaging options. Additionally, it incorporates error detection and correction capabilities, which can be critical for applications where data integrity is paramount. The IS61WV25616EDBLL-8BLI-TR is packaged in a JEDEC standard 44-pin TSOP-II or 48-pin Mini BGA format, facilitating integration into various electronic designs.
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 8ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 8 ns 48-TFBGA (6x8)
IC SRAM 4MBIT PARALLEL 48TFBGA
IC SRAM 4MBIT PARALLEL 48TFBGA
| DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61WV25616EDBLL-8BLI-TR-ND | IS61WV25616EDBLL-8BLI-TR | IS61WV25616EDBLL-8BLI-TR | IS61WV25616EDBLL-8BLI-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits |
| Package Type | 48-TFBGA | BGA; 48-TFBGA |
