Integrated Silicon Solution, Inc. Memory IS61WV25616EDBLL-8BLI-TR

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 8ns 48-TFBGA (6x8)
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Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 8ns 48-TFBGA (6x8)
Request a Quote
Datasheet
Datasheet Summary
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The IS61WV25616EDBLL-8BLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 4,194,304 bits, organized as 262,144 words by 16 bits. It features access times of 8 ns and 10 ns, making it suitable for applications requiring fast data retrieval. The device operates on a single power supply ranging from 2.4V to 3.6V, with typical active power consumption of 85 mW and standby power of 7 mW. This memory chip supports fully static operation, eliminating the need for a clock or refresh cycles, which simplifies system design. It includes three-state outputs and allows for data control of upper and lower bytes, enhancing flexibility in data handling. The device is designed to operate within industrial and automotive temperature ranges and is available in lead-free packaging options. Additionally, it incorporates error detection and correction capabilities, which can be critical for applications where data integrity is paramount. The IS61WV25616EDBLL-8BLI-TR is packaged in a JEDEC standard 44-pin TSOP-II or 48-pin Mini BGA format, facilitating integration into various electronic designs.

Datasheet Summary
Powered by GS/AI

The IS61WV25616EDBLL-8BLI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 4,194,304 bits, organized as 262,144 words by 16 bits. It features access times of 8 ns and 10 ns, making it suitable for applications requiring fast data retrieval. The device operates on a single power supply ranging from 2.4V to 3.6V, with typical active power consumption of 85 mW and standby power of 7 mW. This memory chip supports fully static operation, eliminating the need for a clock or refresh cycles, which simplifies system design. It includes three-state outputs and allows for data control of upper and lower bytes, enhancing flexibility in data handling. The device is designed to operate within industrial and automotive temperature ranges and is available in lead-free packaging options. Additionally, it incorporates error detection and correction capabilities, which can be critical for applications where data integrity is paramount. The IS61WV25616EDBLL-8BLI-TR is packaged in a JEDEC standard 44-pin TSOP-II or 48-pin Mini BGA format, facilitating integration into various electronic designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV25616EDBLL-8BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 8ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 8ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV25616EDBLL-8BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25616EDBLL-8BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV25616EDBLL-8BLI-TR
IC SRAM 4MBIT PARALLEL 48TFBGA

IC SRAM 4MBIT PARALLEL 48TFBGA

Supplier's Site
IC SRAM 4MBIT PARALLEL 48TFBGA

IC SRAM 4MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
SRAM - Asynchronous Memory IC 4Mbit Parallel 8 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 8 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV25616EDBLL-8BLI-TR-ND IS61WV25616EDBLL-8BLI-TR IS61WV25616EDBLL-8BLI-TR IS61WV25616EDBLL-8BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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