Integrated Silicon Solution, Inc. Memory - SRAM - IS61WV25616BLL-10BLI IS61WV25616BLL-10BLI

Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 017870-IS61WV25616BL L-10BLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10ns Family Name: IS61WV25616BLL Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-miniBGA (6x8) Supply Voltage - Operating: 2.4 V to 3.6 V Memory Format: SRAM Alternative Parts (Cross-Reference): CY7C1041G30-10BVXIT; CY7C1041GN30-10BVJXI T ; CY7C1041GN30-10BVXIT ; CY7C1041GN30-10BVXI; Introduction Date: July 20, 2007 ECCN: 3A991 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 017870-IS61WV25616BL L-10BLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10ns Family Name: IS61WV25616BLL Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-miniBGA (6x8) Supply Voltage - Operating: 2.4 V to 3.6 V Memory Format: SRAM Alternative Parts (Cross-Reference): CY7C1041G30-10BVXIT; CY7C1041GN30-10BVJXI T ; CY7C1041GN30-10BVXIT ; CY7C1041GN30-10BVXI; Introduction Date: July 20, 2007 ECCN: 3A991 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - IS61WV25616BLL-10BLI - 017870-IS61WV25616BLL-10BLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61WV25616BLL-10BLI
017870-IS61WV25616BLL-10BLI
Memory - SRAM - IS61WV25616BLL-10BLI 017870-IS61WV25616BLL-10BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 017870-IS61WV25616BL L-10BLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10ns Family Name: IS61WV25616BLL Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-miniBGA (6x8) Supply Voltage - Operating: 2.4 V to 3.6 V Memory Format: SRAM Alternative Parts (Cross-Reference): CY7C1041G30-10BVXIT; CY7C1041GN30-10BVJXI T ; CY7C1041GN30-10BVXIT ; CY7C1041GN30-10BVXI; Introduction Date: July 20, 2007 ECCN: 3A991 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 017870-IS61WV25616BLL-10BLI
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 10ns
Family Name: IS61WV25616BLL
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-miniBGA (6x8)
Supply Voltage - Operating: 2.4 V to 3.6 V
Memory Format: SRAM
Alternative Parts (Cross-Reference): CY7C1041G30-10BVXIT; CY7C1041GN30-10BVJXIT ; CY7C1041GN30-10BVXIT; CY7C1041GN30-10BVXI;
Introduction Date: July 20, 2007
ECCN: 3A991
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61WV25616BLL-10BLI - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS61WV25616BLL-10BLI
Memory IC and Storage Component 774-IS61WV25616BLL-10BLI
IC SRAM 4MBIT PARALLEL 48TFBGA Product overview: IS61WV25616BLL-10BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61WV25616BLL-1 0BLI can be used for catalog matching and distributor lookup.

IC SRAM 4MBIT PARALLEL 48TFBGA Product overview: IS61WV25616BLL-10BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61WV25616BLL-10BLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 706-1104-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 48MINIBGA

IC SRAM 4MBIT PARALLEL 48MINIBGA

Supplier's Site Datasheet
IC SRAM 4MBIT PARALLEL 48MINIBGA

IC SRAM 4MBIT PARALLEL 48MINIBGA

Supplier's Site Datasheet
Memory - IS61WV25616BLL-10BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV25616BLL-10BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV25616BLL-10BLI
Integrated Circuits (ICs) - Memory - Memory IS61WV25616BLL-10BLI
IC SRAM 4MBIT PARALLEL 48TFBGA

IC SRAM 4MBIT PARALLEL 48TFBGA

Supplier's Site
Sram, 4Mbit, 10Ns, Bga-48; Memory Size Integrated Silicon Solution (Issi) - 65AC6032 - Newark, An Avnet Company
Chicago, IL, United States
Sram, 4Mbit, 10Ns, Bga-48; Memory Size Integrated Silicon Solution (Issi)
65AC6032
Sram, 4Mbit, 10Ns, Bga-48; Memory Size Integrated Silicon Solution (Issi) 65AC6032
SRAM, 4MBIT, 10NS, BGA-48; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.4V to 3.6V; Memory Case Style:BGA; No. of Pins:48Pins; Access Time:10ns; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes

SRAM, 4MBIT, 10NS, BGA-48; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.4V to 3.6V; Memory Case Style:BGA; No. of Pins:48Pins; Access Time:10ns; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Lingto Electronic Limited ODG (Origin Data Global) Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 017870-IS61WV25616BLL-10BLI 774-IS61WV25616BLL-10BLI 706-1104-ND IS61WV25616BLL-10BLI IS61WV25616BLL-10BLI IS61WV25616BLL-10BLI IS61WV25616BLL-10BLI 65AC6032
Product Name Memory - SRAM - IS61WV25616BLL-10BLI Memory IC and Storage Component Memory Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory Sram, 4Mbit, 10Ns, Bga-48; Memory Size Integrated Silicon Solution (Issi)
Memory Category Volatile; SRAM Chip SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM - Asynchronous; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM Chip
Access Time 10 ns 10 ns 10 ns 10 ns 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F)
Package Type BGA; 48-miniBGA (6x8) 48-TFBGA 48-TFBGA BGA; 48-TFBGA BGA
Supply Voltage 2.4 V ~ 3.6 V -3.3V; 2.4 2.4V ~ 3.6V 2.4V ~ 3.6V 3.6V; 2.4V ~ 3.6V Surface Mount
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