Integrated Silicon Solution, Inc. Memory IS61WV20488FBLL-10BLI

Description
16Mb,High-Speed,Asyn c,2Mbx8,10ns
Request a Quote
Description
16Mb,High-Speed,Asyn c,2Mbx8,10ns
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IS61WV20488FBLL-10BLI is a high-speed asynchronous CMOS static RAM with a capacity of 16M bits, organized as 2048K words by 8 bits. It operates with a supply voltage range of 2.4V to 3.6V and features an access time of 10 ns. This memory device is designed for low power consumption and high performance, making it suitable for various applications. The product includes multiple center power and ground pins to enhance noise immunity and is compatible with TTL logic levels. It supports both single and dual chip select configurations and features data control for upper and lower bytes. The IS61WV20488FBLL-10BLI is available in a 48-ball mini BGA package, measuring 6mm x 8mm, and is lead-free. This memory device is suitable for industrial and automotive applications, with an operating temperature range of -40¬8C to +125¬8C for automotive versions. The device enters a standby mode when deselected, reducing power dissipation. Overall, this SRAM is a reliable choice for engineers seeking efficient memory solutions in their projects.

Datasheet Summary
Powered by GS/AI

The IS61WV20488FBLL-10BLI is a high-speed asynchronous CMOS static RAM with a capacity of 16M bits, organized as 2048K words by 8 bits. It operates with a supply voltage range of 2.4V to 3.6V and features an access time of 10 ns. This memory device is designed for low power consumption and high performance, making it suitable for various applications. The product includes multiple center power and ground pins to enhance noise immunity and is compatible with TTL logic levels. It supports both single and dual chip select configurations and features data control for upper and lower bytes. The IS61WV20488FBLL-10BLI is available in a 48-ball mini BGA package, measuring 6mm x 8mm, and is lead-free. This memory device is suitable for industrial and automotive applications, with an operating temperature range of -40¬8C to +125¬8C for automotive versions. The device enters a standby mode when deselected, reducing power dissipation. Overall, this SRAM is a reliable choice for engineers seeking efficient memory solutions in their projects.

Suppliers

Company
Product
Description
Supplier Links
16Mb,High-Speed,Asyn c,2Mbx8,10ns

16Mb,High-Speed,Async,2Mbx8,10ns

Supplier's Site Datasheet
Memory - 706-IS61WV20488FBLL-10BLI-ND - DigiKey
Thief River Falls, MN, United States
IC SRAM 16MBIT PAR

IC SRAM 16MBIT PAR

Buy Now Datasheet
IT infrastructure Memory - 1455525-IS61WV20488FBLL-10BLI - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1455525-IS61WV20488FBLL-10BLI
IT infrastructure Memory 1455525-IS61WV20488FBLL-10BLI
Category: IT infrastructure Memory Win Source Part Number: 1455525-IS61WV20488F BLL-10BLI Manufacturer: ISSI, Integrated Silicon Solution Inc

Category: IT infrastructure Memory
Win Source Part Number: 1455525-IS61WV20488FBLL-10BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc

Buy Now
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV20488FBLL-10BLI
Integrated Circuits (ICs) - Memory - Memory IS61WV20488FBLL-10BLI
16Mb,High-Speed,Asyn c,2Mbx8,10ns

16Mb,High-Speed,Async,2Mbx8,10ns

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV20488FBLL-10BLI 706-IS61WV20488FBLL-10BLI-ND 1455525-IS61WV20488FBLL-10BLI IS61WV20488FBLL-10BLI IS61WV20488FBLL-10BLI
Product Name Memory Memory IT infrastructure Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM - Asynchronous SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memories - nvSRAM (non-volatile SRAM) - CY14V116G7-BZ30XI - CY14V116G7-BZ30XI - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits
View Details
4 suppliers
Flash Memory - 1882682P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - 0436A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details