Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS61WV12816EDBLL-10TLI

Description
Win Source Part Number: 977613-IS61WV12816ED BLL-10TLI Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 2Mb (128K x 16) Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 81 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: ISSI, Integrated Silicon Solution Inc Other Names: 706-1498,IS61WV12816 EDBLL-10TLI-ND Base Product Number: IS61WV12816
  • Integrated Circuits (ICs) - Memory - 977613-IS61WV12816EDBLL-10TLI - Win Source Electronics
    Win Source Electronics
  • Memory - 706-1498-ND - DigiKey
    DigiKey
  • Memory IC and Storage Component - 774-IS61WV12816EDBLL-10TLI - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory >> SRAM - IS61WV12816EDBLL-10TLI - LCSC Electronics Technology (HK) Limited
    LCSC Electronics Technology (HK) Limited
  • Integrated Circuits (ICs) - Memory - Memory - IS61WV12816EDBLL-10TLI - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - IS61WV12816EDBLL-10TLI - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - IS61WV12816EDBLL-10TLI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • 2Mb,high-Speed,async With Ecc,128K X 16,10Ns,2.4V-3.6V, 44 Pin Tsop Ii, Rohs Integrated Silicon Solution (Issi) - 77T0762 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 977613-IS61WV12816ED BLL-10TLI Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 2Mb (128K x 16) Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 81 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: ISSI, Integrated Silicon Solution Inc Other Names: 706-1498,IS61WV12816 EDBLL-10TLI-ND Base Product Number: IS61WV12816
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 977613-IS61WV12816EDBLL-10TLI - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
977613-IS61WV12816EDBLL-10TLI
Integrated Circuits (ICs) - Memory 977613-IS61WV12816EDBLL-10TLI
Win Source Part Number: 977613-IS61WV12816ED BLL-10TLI Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 135 Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 2Mb (128K x 16) Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 81 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: ISSI, Integrated Silicon Solution Inc Other Names: 706-1498,IS61WV12816 EDBLL-10TLI-ND Base Product Number: IS61WV12816

Win Source Part Number: 977613-IS61WV12816EDBLL-10TLI
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 135
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 2Mb (128K x 16)
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 81 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: ISSI, Integrated Silicon Solution Inc
Other Names: 706-1498,IS61WV12816EDBLL-10TLI-ND
Base Product Number: IS61WV12816

Buy Now Datasheet
Memory - 706-1498-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
706-1498-ND
Memory 706-1498-ND
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 10ns 44-TSOP II

SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 10ns 44-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61WV12816EDBLL-10TLI - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS61WV12816EDBLL-10TLI
Memory IC and Storage Component 774-IS61WV12816EDBLL-10TLI
IC SRAM 2MBIT PARALLEL 44TSOP II Product overview: IS61WV12816EDBLL-10T LI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61WV12816EDBLL -10TLI can be used for catalog matching and distributor lookup.

IC SRAM 2MBIT PARALLEL 44TSOP II Product overview: IS61WV12816EDBLL-10TLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61WV12816EDBLL-10TLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory >> SRAM - IS61WV12816EDBLL-10TLI - LCSC Electronics Technology (HK) Limited
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Memory >> SRAM
IS61WV12816EDBLL-10TLI
Memory >> SRAM IS61WV12816EDBLL-10TLI
TSOP-44-10.2mm SRAM ROHS

TSOP-44-10.2mm SRAM ROHS

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV12816EDBLL-10TLI - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV12816EDBLL-10TLI
Integrated Circuits (ICs) - Memory - Memory IS61WV12816EDBLL-10TLI
IC SRAM 2MBIT PARALLEL 44TSOP II

IC SRAM 2MBIT PARALLEL 44TSOP II

Supplier's Site
Memory - IS61WV12816EDBLL-10TLI - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS61WV12816EDBLL-10TLI
Memory IS61WV12816EDBLL-10TLI
IC SRAM 2MBIT PARALLEL 44TSOP II

IC SRAM 2MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet
Memory - IS61WV12816EDBLL-10TLI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS61WV12816EDBLL-10TLI
Memory IS61WV12816EDBLL-10TLI
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet
2Mb,high-Speed,async With Ecc,128K X 16,10Ns,2.4V-3.6V, 44 Pin Tsop Ii, Rohs Integrated Silicon Solution (Issi) - 77T0762 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
2Mb,high-Speed,async With Ecc,128K X 16,10Ns,2.4V-3.6V, 44 Pin Tsop Ii, Rohs Integrated Silicon Solution (Issi)
77T0762
2Mb,high-Speed,async With Ecc,128K X 16,10Ns,2.4V-3.6V, 44 Pin Tsop Ii, Rohs Integrated Silicon Solution (Issi) 77T0762
2Mb,High-Speed,Async with ECC,128K x 16,10ns,2.4V-3.6V, 44 Pin TSOP II, RoHS

2Mb,High-Speed,Async with ECC,128K x 16,10ns,2.4V-3.6V, 44 Pin TSOP II, RoHS

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 977613-IS61WV12816EDBLL-10TLI 706-1498-ND 774-IS61WV12816EDBLL-10TLI IS61WV12816EDBLL-10TLI IS61WV12816EDBLL-10TLI IS61WV12816EDBLL-10TLI IS61WV12816EDBLL-10TLI 77T0762
Product Name Integrated Circuits (ICs) - Memory Memory Memory IC and Storage Component Memory >> SRAM Integrated Circuits (ICs) - Memory - Memory Memory Memory 2Mb,high-Speed,async With Ecc,128K X 16,10Ns,2.4V-3.6V, 44 Pin Tsop Ii, Rohs Integrated Silicon Solution (Issi)
Memory Category Volatile; SRAM Chip SRAM Chip SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns 10 ns 10 ns
Cycle Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 2.4V ~ 3.6V 2.4V ~ 3.6V -3.3V; 2.4 -40degC ~ 85degC (TA) 3.6V; 2.4V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG - Texas Instruments
Texas Instruments
SMV512K32-SP 16MB Radiation-Hardened SRAM
SMV512K32HFG
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
7 suppliers
Memory - 46L0278 - Lingto Electronic Limited
Rochester Electronics
Memory
46L0278
View Details
Memory - AS8S128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8S128K32
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY14B256Q2A-SXIT-ND - DigiKey
Infineon Technologies AG
Memory
CY14B256Q2A-SXIT
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)"
View Details
3 suppliers