The IS61WV12816EDBLL-10TLI-TR is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It features an access time of 10 ns and operates with a single power supply ranging from 2.4V to 3.6V. The device is designed for low power consumption, with typical active power at 85 mW and standby power at 7 mW. It supports fully static operation, eliminating the need for a clock or refresh cycles, and includes three-state outputs for data control of upper and lower bytes. The memory is packaged in a 44-pin TSOP-II format and is suitable for industrial and automotive applications, with options for lead-free packaging. Additionally, it incorporates error detection and correction capabilities, enhancing reliability in critical applications.
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 10ns 44-TSOP II
IC SRAM 2MBIT PARALLEL 44TSOP II Product overview: IS61WV12816EDBLL-10T
Win Source Part Number: 1118510-IS61WV12816E
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 2Mb (128K x 16)
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 74 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS61WV12816
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II
2Mb,High-Speed,Async
IC SRAM 2MBIT PARALLEL 44TSOP II
IC SRAM 2MBIT PARALLEL 44TSOP II
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61WV12816EDBLL-10TLI-TR-ND | 774-IS61WV12816EDBLL-10TLI-TR | 1118510-IS61WV12816EDBLL-10TLI-TR | IS61WV12816EDBLL-10TLI-TR | 77T0763 | IS61WV12816EDBLL-10TLI-TR | IS61WV12816EDBLL-10TLI-TR |
| Product Name | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | 2Mb,high-Speed,async With Ecc,128K X 16,10Ns,2.4V-3.6V, 44 Pin Tsop Ii, Rohs Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 2000 kbits | 2000 kbits | 2000 kbits | 2000 kbits | 2000 kbits | ||
| Package Type | TSOP; "44-TSOP (0.400"", 10.16mm Width)" | 44-TSOP (0.400\", 10.16mm Width) | |||||
| Supply Voltage | 2.4V ~ 3.6V | -3.3V; 2.4 | 2.4V ~ 3.6V | 3.6V; 2.4V ~ 3.6V | Surface Mount |
