Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS61WV10248EEBLL-10B2LI

Description
8Mb,High-Speed/Low Power,Async w
Datasheet
Description
8Mb,High-Speed/Low Power,Async w
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV10248EEBLL-10B2LI
Integrated Circuits (ICs) - Memory - Memory IS61WV10248EEBLL-10B2LI
8Mb,High-Speed/Low Power,Async w

8Mb,High-Speed/Low Power,Async w

Supplier's Site
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61WV10248EEBLL-10B2LI IS61WV10248EEBLL-10B2LI
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 10 ns
Density 8000 kbits 8000 kbits
Supply Voltage Surface Mount 3.6V; 2.4V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C1008ECA55L883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 71V25761YS200PFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.1 ns
Density 4500 kbits
View Details