Integrated Silicon Solution, Inc. Memory IS61WV102416EDBLL-10T2LI-TR

Description
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TSOP I
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Description
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TSOP I
Request a Quote
Datasheet
Datasheet Summary
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The IS61WV102416EDBLL-10T2LI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 16 megabits, organized as 1M words by 16 bits. It features an access time of 10ns and operates with a single power supply voltage range of 2.4V to 3.6V. The device includes error detection and correction capabilities, with dedicated ERR1 and ERR2 output pins for 1-bit and 2-bit error detection, respectively. It supports three-state outputs and is suitable for both industrial and automotive temperature ranges. The memory is available in a 48-pin mini BGA package, measuring 6mm x 8mm, and is also offered in a lead-free option. The device is designed for low power consumption, entering standby mode when deselected, which can help reduce power dissipation. This product is ideal for applications requiring reliable memory with error correction features.

Datasheet Summary
Powered by GS/AI

The IS61WV102416EDBLL-10T2LI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 16 megabits, organized as 1M words by 16 bits. It features an access time of 10ns and operates with a single power supply voltage range of 2.4V to 3.6V. The device includes error detection and correction capabilities, with dedicated ERR1 and ERR2 output pins for 1-bit and 2-bit error detection, respectively. It supports three-state outputs and is suitable for both industrial and automotive temperature ranges. The memory is available in a 48-pin mini BGA package, measuring 6mm x 8mm, and is also offered in a lead-free option. The device is designed for low power consumption, entering standby mode when deselected, which can help reduce power dissipation. This product is ideal for applications requiring reliable memory with error correction features.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61WV102416EDBLL-10T2LI-TR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TSOP I

SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TSOP I

Buy Now Datasheet
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TSOP I

SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TSOP I

Buy Now Datasheet
IC SRAM 16MBIT PARALLEL 48TSOP I

IC SRAM 16MBIT PARALLEL 48TSOP I

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61WV102416EDBLL-10T2LI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61WV102416EDBLL-10T2LI-TR
Integrated Circuits (ICs) - Memory - Memory IS61WV102416EDBLL-10T2LI-TR
IC SRAM 16MBIT PARALLEL 48TSOP I

IC SRAM 16MBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61WV102416EDBLL-10T2LI-TR-ND IS61WV102416EDBLL-10T2LI-TR IS61WV102416EDBLL-10T2LI-TR IS61WV102416EDBLL-10T2LI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip 48-TFSOP (0.724, 18.40mm Width)
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits
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