The IS61WV102416EDBLL-10T2LI-TR is a high-speed asynchronous CMOS static RAM with a capacity of 16 megabits, organized as 1M words by 16 bits. It features an access time of 10ns and operates with a single power supply voltage range of 2.4V to 3.6V. The device includes error detection and correction capabilities, with dedicated ERR1 and ERR2 output pins for 1-bit and 2-bit error detection, respectively. It supports three-state outputs and is suitable for both industrial and automotive temperature ranges. The memory is available in a 48-pin mini BGA package, measuring 6mm x 8mm, and is also offered in a lead-free option. The device is designed for low power consumption, entering standby mode when deselected, which can help reduce power dissipation. This product is ideal for applications requiring reliable memory with error correction features.
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TSOP I
IC SRAM 16MBIT PARALLEL 48TSOP I
IC SRAM 16MBIT PARALLEL 48TSOP I
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-TSOP I
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61WV102416EDBLL-10T2LI-TR-ND | IS61WV102416EDBLL-10T2LI-TR | IS61WV102416EDBLL-10T2LI-TR | IS61WV102416EDBLL-10T2LI-TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | 48-TFSOP (0.724, 18.40mm Width) | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 16000 kbits | 16000 kbits | 16000 kbits |
