The IS61VPS51236A-200B3I is a high-speed, low-power synchronous static RAM with a capacity of 512K words organized as 36 bits. It operates at a frequency of 200 MHz, providing fast access times of 3.1 ns and cycle times of 5 ns. The device features an internal self-timed write cycle, individual byte write control, and global write capabilities, allowing for flexible data handling. It supports burst sequence control and has a snooze mode for reduced power consumption during standby. The memory is available in a 165-ball PBGA package and operates with a power supply of 2.5V. This product is suitable for communication and networking applications where high performance and efficiency are required.
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)
IC SRAM 18MBIT PARALLEL 165TFBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | IS61VPS51236A-200B3I | IS61VPS51236A-200B3I |
| Product Name | Memory | Memory |
| Memory Category | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 3.1 ns | 3.1 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) |
