Integrated Silicon Solution, Inc. Memory IS61VPD51236A-200B3-TR

The IS61VPD51236A-200B3-TR is a high-speed, low-power synchronous static RAM organized as 512K words by 36 bits, designed for burstable memory applications in communication and networking. It features an internal self-timed write cycle, individual byte write control, and global write capability, allowing for flexible data handling. The device supports clock-controlled operations with a maximum frequency of 250 MHz and an access time of 2.6 ns. It includes options for burst sequence control and has a snooze mode for reduced power consumption during standby. The memory is available in both 100-pin TQFP and 165-pin PBGA packages, with lead-free options. This product is suitable for applications requiring high-performance memory solutions.