Integrated Silicon Solution, Inc. Memory IS61VF102418A-6.5B3

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61VF102418A-6.5B3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS61VF102418A-6.5B3 IS61VF102418A-6.5B3
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 6.5 ns 6.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S15YG8 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Memory - 16-3696-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
5V Memory IC and Storage Component - 774-MT5C1008F45L/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers