Integrated Silicon Solution, Inc. Memory IS61VF102418A-6.5B3

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61VF102418A-6.5B3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 133 MHz 6.5 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS61VF102418A-6.5B3 IS61VF102418A-6.5B3
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 6.5 ns 6.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details
Memory - NMC27C256BN150 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Memory - 28232478 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details