Integrated Silicon Solution, Inc. Memory IS61QDP2B24M18A-333M3L

The IS61QDP2B24M18A-333M3L is a 72Mb synchronous SRAM memory device from Quarktwin Technology Ltd., featuring a 4Mx18 configuration. It operates at a speed of 333 MHz with a 2.0 cycle read latency, making it suitable for high-performance applications. The device supports double data rate (DDR) operations for both read and write input ports, allowing for efficient data handling. This SRAM includes separate independent read and write ports, enabling concurrent operations, and features a fixed 2-bit burst for read and write processes. It is designed with an on-chip Delay-Locked Loop (DLL) to provide a wide data valid window and supports clock stop functionality. The memory operates with a core power supply of +1.8V and has HSTL input/output interfaces. The IS61QDP2B24M18A-333M3L is packaged in a fine ball grid array (FBGA) format, measuring 15mm x 17mm with 165 balls, and offers programmable impedance output drivers. It also includes features such as byte write capability and boundary scan support via JTAG. This product is suitable for applications requiring high-speed memory solutions with robust data integrity.