Integrated Silicon Solution, Inc. Memory IS61QDB42M18C-250M3

Description
IC SRAM 36MBIT PARALLEL 165LFBGA
Datasheet
Description
IC SRAM 36MBIT PARALLEL 165LFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
Memory - IS61QDB42M18C-250M3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, QUAD Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (15x17)

SRAM - Synchronous, QUAD Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (15x17)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61QDB42M18C-250M3 IS61QDB42M18C-250M3
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 8.4 ns 8.4 ns
Density 36000 kbits 36000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C01 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 54F189DLQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Access Time 32 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - 00002444259 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details