Integrated Silicon Solution, Inc. Memory IS61QDB22M18-250M3I

Description
SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 250MHz 1.35ns 165-LFBGA (15x17)
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Description
SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 250MHz 1.35ns 165-LFBGA (15x17)
Request a Quote
Datasheet
Datasheet Summary
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The IS61QDB22M18-250M3I is a 36 Mb synchronous SRAM from Quarktwin Technology Ltd., featuring a 2M x 18 organization. It operates at a speed of 250 MHz and utilizes a double data rate (DDR) interface for both read and write operations. The device supports separate read and write ports, allowing for concurrent operations, and includes an on-chip delay-locked loop (DLL) to enhance data validity. This SRAM is packaged in a fine ball grid array (FBGA) format with a body size of 15mm x 17mm and a 1mm pitch, accommodating 165 balls. It operates with a core power supply of +1.8V and supports HSTL input/output levels. The device also features programmable impedance output drivers and supports byte write capabilities, enabling selective writing on a per-byte basis. The IS61QDB22M18-250M3I is suitable for applications requiring high-speed memory with efficient data handling and is tested for industrial temperature ranges from -40¬8C to +85¬8C.

Datasheet Summary
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The IS61QDB22M18-250M3I is a 36 Mb synchronous SRAM from Quarktwin Technology Ltd., featuring a 2M x 18 organization. It operates at a speed of 250 MHz and utilizes a double data rate (DDR) interface for both read and write operations. The device supports separate read and write ports, allowing for concurrent operations, and includes an on-chip delay-locked loop (DLL) to enhance data validity. This SRAM is packaged in a fine ball grid array (FBGA) format with a body size of 15mm x 17mm and a 1mm pitch, accommodating 165 balls. It operates with a core power supply of +1.8V and supports HSTL input/output levels. The device also features programmable impedance output drivers and supports byte write capabilities, enabling selective writing on a per-byte basis. The IS61QDB22M18-250M3I is suitable for applications requiring high-speed memory with efficient data handling and is tested for industrial temperature ranges from -40¬8C to +85¬8C.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS61QDB22M18-250M3I-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 250MHz 1.35ns 165-LFBGA (15x17)

SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 250MHz 1.35ns 165-LFBGA (15x17)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61QDB22M18-250M3I - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS61QDB22M18-250M3I
Memory IC and Storage Component 774-IS61QDB22M18-250M3I
IC SRAM 36MBIT PARALLEL 165LFBGA Product overview: IS61QDB22M18-250M3I from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61QDB22M18-250 M3I can be used for catalog matching and distributor lookup.

IC SRAM 36MBIT PARALLEL 165LFBGA Product overview: IS61QDB22M18-250M3I from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61QDB22M18-250M3I can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SRAM - IS61QDB22M18-250M3I - 875486-IS61QDB22M18-250M3I - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61QDB22M18-250M3I
875486-IS61QDB22M18-250M3I
Memory - SRAM - IS61QDB22M18-250M3I 875486-IS61QDB22M18-250M3I
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 875486-IS61QDB22M18- 250M3I Operating Temperature Range: -40°C ~ 85°C (TA) Features: SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 165-LFBGA (15x17) Package: Tray Package: 165-LBGA Mounting: Surface Mount Part Status: Obsolete Categories: Integrated Circuits (ICs) Case / Package: 165-LFBGA (15x17) ECCN: OBSOLETE Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 105 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 875486-IS61QDB22M18-250M3I
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 165-LFBGA (15x17)
Package: Tray
Package: 165-LBGA
Mounting: Surface Mount
Part Status: Obsolete
Categories: Integrated Circuits (ICs)
Case / Package: 165-LFBGA (15x17)
ECCN: OBSOLETE
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 105
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61QDB22M18-250M3I - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61QDB22M18-250M3I
Integrated Circuits (ICs) - Memory - Memory IS61QDB22M18-250M3I
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
Memory - IS61QDB22M18-250M3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, QUAD Memory IC 36Mbit Parallel 250 MHz 1.35 ns 165-LFBGA (15x17)

SRAM - Synchronous, QUAD Memory IC 36Mbit Parallel 250 MHz 1.35 ns 165-LFBGA (15x17)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS61QDB22M18-250M3I-ND 774-IS61QDB22M18-250M3I 875486-IS61QDB22M18-250M3I IS61QDB22M18-250M3I IS61QDB22M18-250M3I IS61QDB22M18-250M3I
Product Name Memory Memory IC and Storage Component Memory - SRAM - IS61QDB22M18-250M3I Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 36000 kbits 36000 kbits 36000 kbits 36000 kbits
Package Type 165-LBGA BGA; Tray BGA; 165-LFBGA (15x17) BGA BGA; 165-LBGA
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