Integrated Silicon Solution, Inc. Memory IS61NVP25672-200B1I

Description
IC SRAM 18MBIT PARALLEL 209LFBGA
Datasheet
Description
IC SRAM 18MBIT PARALLEL 209LFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 18MBIT PARALLEL 209LFBGA

IC SRAM 18MBIT PARALLEL 209LFBGA

Supplier's Site Datasheet
Memory - IS61NVP25672-200B1I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61NVP25672-200B1I IS61NVP25672-200B1I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.1 ns 3.1 ns
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C01AI/SN - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
SMV512K32-SP 16MB Radiation-Hardened SRAM - 5962-1123701VXC - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
3 suppliers
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details