Integrated Silicon Solution, Inc. Memory IS61NVP25672-200B1I

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61NVP25672-200B1I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 209LFBGA

IC SRAM 18MBIT PARALLEL 209LFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS61NVP25672-200B1I IS61NVP25672-200B1I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.1 ns 3.1 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882521 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - 28276189 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS5SS256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Memory - 0436A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details