The IS61NVP25672-200B1-TR is a high-speed, low-power synchronous static RAM (SRAM) from Quarktwin Technology Ltd., designed for networking and communications applications. It features a 256K x 72 bit organization and operates at a frequency of 200 MHz with a clock access time of 3.1 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 209-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also features a power-down mode and JTAG boundary scan capability for easier integration into systems. Engineers considering this product should note its suitability for applications requiring high performance and efficiency, particularly in environments where rapid data access is critical.
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
IC SRAM 18MBIT PARALLEL 209LFBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | IS61NVP25672-200B1-TR | IS61NVP25672-200B1-TR |
| Product Name | Memory | Memory |
| Memory Category | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 3.1 ns | 3.1 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) |
