Integrated Silicon Solution, Inc. Memory IS61NVP25672-200B1-TR

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
Datasheet
Datasheet Summary
Powered by GS/AI

The IS61NVP25672-200B1-TR is a high-speed, low-power synchronous static RAM (SRAM) from Quarktwin Technology Ltd., designed for networking and communications applications. It features a 256K x 72 bit organization and operates at a frequency of 200 MHz with a clock access time of 3.1 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 209-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also features a power-down mode and JTAG boundary scan capability for easier integration into systems. Engineers considering this product should note its suitability for applications requiring high performance and efficiency, particularly in environments where rapid data access is critical.

Datasheet Summary
Powered by GS/AI

The IS61NVP25672-200B1-TR is a high-speed, low-power synchronous static RAM (SRAM) from Quarktwin Technology Ltd., designed for networking and communications applications. It features a 256K x 72 bit organization and operates at a frequency of 200 MHz with a clock access time of 3.1 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 209-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also features a power-down mode and JTAG boundary scan capability for easier integration into systems. Engineers considering this product should note its suitability for applications requiring high performance and efficiency, particularly in environments where rapid data access is critical.

Suppliers

Company
Product
Description
Supplier Links
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 209LFBGA

IC SRAM 18MBIT PARALLEL 209LFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS61NVP25672-200B1-TR IS61NVP25672-200B1-TR
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.1 ns 3.1 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Memory - AS4DDR232M64 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - 6116LA20TPG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details
Flash Memory - 1882682P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details