Integrated Silicon Solution, Inc. Memory IS61NVP102418-250B3I

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)
Datasheet
Datasheet Summary
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The IS61NVP102418-250B3I is an 18Mb synchronous static RAM designed for high-performance applications in networking and communications. It features a 1M x 18 bit organization and operates at a clock frequency of 250 MHz with a clock access time of 2.6 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 165-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also includes a power-down mode and JTAG boundary scan capability for easier integration into systems. The IS61NVP102418-250B3I is suitable for applications requiring fast access times and efficient memory management, making it a viable option for engineers looking for reliable memory solutions in high-speed environments.

Datasheet Summary
Powered by GS/AI

The IS61NVP102418-250B3I is an 18Mb synchronous static RAM designed for high-performance applications in networking and communications. It features a 1M x 18 bit organization and operates at a clock frequency of 250 MHz with a clock access time of 2.6 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 165-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also includes a power-down mode and JTAG boundary scan capability for easier integration into systems. The IS61NVP102418-250B3I is suitable for applications requiring fast access times and efficient memory management, making it a viable option for engineers looking for reliable memory solutions in high-speed environments.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61NVP102418-250B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS61NVP102418-250B3I IS61NVP102418-250B3I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 2.6 ns 2.6 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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