Integrated Silicon Solution, Inc. Memory IS61NVP102418-250B3I

Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Datasheet
Datasheet Summary
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The IS61NVP102418-250B3I is an 18Mb synchronous static RAM designed for high-performance applications in networking and communications. It features a 1M x 18 bit organization and operates at a clock frequency of 250 MHz with a clock access time of 2.6 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 165-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also includes a power-down mode and JTAG boundary scan capability for easier integration into systems. The IS61NVP102418-250B3I is suitable for applications requiring fast access times and efficient memory management, making it a viable option for engineers looking for reliable memory solutions in high-speed environments.

Datasheet Summary
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The IS61NVP102418-250B3I is an 18Mb synchronous static RAM designed for high-performance applications in networking and communications. It features a 1M x 18 bit organization and operates at a clock frequency of 250 MHz with a clock access time of 2.6 ns. The device supports a 'no wait' state, eliminating wait cycles between read and write operations, which enhances bus utilization. This SRAM includes individual byte write control, a single read/write control pin, and supports both interleaved and linear burst sequences through a mode input. It is packaged in a 165-ball PBGA format and operates with a power supply of 2.5V (±5%) for both Vdd and Vddq. The device also includes a power-down mode and JTAG boundary scan capability for easier integration into systems. The IS61NVP102418-250B3I is suitable for applications requiring fast access times and efficient memory management, making it a viable option for engineers looking for reliable memory solutions in high-speed environments.

Suppliers

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Product
Description
Supplier Links
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Memory - IS61NVP102418-250B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61NVP102418-250B3I IS61NVP102418-250B3I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 2.6 ns 2.6 ns
Density 18000 kbits 18000 kbits
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