Integrated Silicon Solution, Inc. Memory IS61NVP102418-200B3I

Description
SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61NVP102418-200B3I-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NVP102418-200B3I - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NVP102418-200B3I
Integrated Circuits (ICs) - Memory - Memory IS61NVP102418-200B3I
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Memory - IS61NVP102418-200B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61NVP102418-200B3I-ND IS61NVP102418-200B3I IS61NVP102418-200B3I IS61NVP102418-200B3I
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type 165-TBGA BGA BGA; 165-TBGA
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