Integrated Silicon Solution, Inc. Memory IS61NVP102418-200B3I

Description
SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61NVP102418-200B3I-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mb (1M x 18) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Memory - IS61NVP102418-200B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NVP102418-200B3I - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NVP102418-200B3I
Integrated Circuits (ICs) - Memory - Memory IS61NVP102418-200B3I
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61NVP102418-200B3I-ND IS61NVP102418-200B3I IS61NVP102418-200B3I IS61NVP102418-200B3I
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type 165-TBGA BGA; 165-TBGA BGA
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