Integrated Silicon Solution, Inc. Memory IS61NVF51236-7.5B3I

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61NVF51236-7.5B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS61NVF51236-7.5B3I IS61NVF51236-7.5B3I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 7.5 ns 7.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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