Integrated Silicon Solution, Inc. Memory IS61NLP51236-250B3I

Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Datasheet
Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Memory - IS61NLP51236-250B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61NLP51236-250B3I IS61NLP51236-250B3I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 2.6 ns 2.6 ns
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8S128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28486511 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420768P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 27C256-20/P230 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details