Integrated Silicon Solution, Inc. Memory IS61NLP51236-250B3I

Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Datasheet
Description
IC SRAM 18MBIT PARALLEL 165TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 18MBIT PARALLEL 165TFBGA

IC SRAM 18MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Memory - IS61NLP51236-250B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS61NLP51236-250B3I IS61NLP51236-250B3I
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 2.6 ns 2.6 ns
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
Memory - 10415FC10 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Density 1 kbits
View Details
2 suppliers
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details