Integrated Silicon Solution, Inc. Memory IS61NLP25672-200B1LI-TR

Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
Datasheet

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SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 209LFBGA

IC SRAM 18MBIT PARALLEL 209LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NLP25672-200B1LI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NLP25672-200B1LI-TR
Integrated Circuits (ICs) - Memory - Memory IS61NLP25672-200B1LI-TR
IC SRAM 18MBIT PAR 209LFBGA

IC SRAM 18MBIT PAR 209LFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61NLP25672-200B1LI-TR IS61NLP25672-200B1LI-TR IS61NLP25672-200B1LI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.1 ns 3.1 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits
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