SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3.1 ns 209-LFBGA (14x22)
IC SRAM 18MBIT PAR 209LFBGA
IC SRAM 18MBIT PARALLEL 209LFBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61NLP25672-200B1LI-TR | IS61NLP25672-200B1LI-TR | IS61NLP25672-200B1LI-TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 3.1 ns | 3.1 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | ||
| Density | 18000 kbits | 18000 kbits | 18000 kbits |
