Integrated Silicon Solution, Inc. Memory - SRAM - IS61NLP25636A-200TQLI IS61NLP25636A-200TQLI

Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 136133-IS61NLP25636A -200TQLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Synchronous Memory Type: Volatile Memory Size: 9Mb (256K x 36) Access Time: 3.1ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 100-TQFP (14x20) Supply Voltage - Operating: 3.135 V to 3.465 V Memory Format: SRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 136133-IS61NLP25636A -200TQLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Synchronous Memory Type: Volatile Memory Size: 9Mb (256K x 36) Access Time: 3.1ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 100-TQFP (14x20) Supply Voltage - Operating: 3.135 V to 3.465 V Memory Format: SRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - IS61NLP25636A-200TQLI - 136133-IS61NLP25636A-200TQLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61NLP25636A-200TQLI
136133-IS61NLP25636A-200TQLI
Memory - SRAM - IS61NLP25636A-200TQLI 136133-IS61NLP25636A-200TQLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 136133-IS61NLP25636A -200TQLI Packaging: Tray Mounting: SMD (SMT) Technology: SRAM - Synchronous Memory Type: Volatile Memory Size: 9Mb (256K x 36) Access Time: 3.1ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 100-TQFP (14x20) Supply Voltage - Operating: 3.135 V to 3.465 V Memory Format: SRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 136133-IS61NLP25636A-200TQLI
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Synchronous
Memory Type: Volatile
Memory Size: 9Mb (256K x 36)
Access Time: 3.1ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 100-TQFP (14x20)
Supply Voltage - Operating: 3.135 V to 3.465 V
Memory Format: SRAM
Max Frequency: 200MHz
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61NLP25636A-200TQLI - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS61NLP25636A-200TQLI
Memory IC and Storage Component 774-IS61NLP25636A-200TQLI
IC SRAM 9MBIT PARALLEL 100TQFP Product overview: IS61NLP25636A-200TQL I from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61NLP25636A-20 0TQLI can be used for catalog matching and distributor lookup.

IC SRAM 9MBIT PARALLEL 100TQFP Product overview: IS61NLP25636A-200TQLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61NLP25636A-200TQLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 706-1102-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-LQFP (14x20)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-LQFP (14x20)

Buy Now Datasheet
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 100-LQFP (14x20)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 100-LQFP (14x20)

Buy Now Datasheet
Sram, 9Mbit, 3.1Ns, Tqfp-100; Memory Size Integrated Silicon Solution (Issi) - 43M5323 - Newark, An Avnet Company
Chicago, IL, United States
Sram, 9Mbit, 3.1Ns, Tqfp-100; Memory Size Integrated Silicon Solution (Issi)
43M5323
Sram, 9Mbit, 3.1Ns, Tqfp-100; Memory Size Integrated Silicon Solution (Issi) 43M5323
SRAM, 9MBIT, 3.1NS, TQFP-100; Memory Size:9Mbit; SRAM Memory Configuration:256K x 8bit; Supply Voltage Range:3.135V to 3.465V; Memory Case Style:TQFP; No. of Pins:100Pins; Access Time:3.1ns; Operating Temperature Min:-40°C RoHS Compliant: Yes

SRAM, 9MBIT, 3.1NS, TQFP-100; Memory Size:9Mbit; SRAM Memory Configuration:256K x 8bit; Supply Voltage Range:3.135V to 3.465V; Memory Case Style:TQFP; No. of Pins:100Pins; Access Time:3.1ns; Operating Temperature Min:-40°C RoHS Compliant: Yes

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NLP25636A-200TQLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NLP25636A-200TQLI
Integrated Circuits (ICs) - Memory - Memory IS61NLP25636A-200TQLI
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 136133-IS61NLP25636A-200TQLI 774-IS61NLP25636A-200TQLI 706-1102-ND IS61NLP25636A-200TQLI 43M5323 IS61NLP25636A-200TQLI IS61NLP25636A-200TQLI
Product Name Memory - SRAM - IS61NLP25636A-200TQLI Memory IC and Storage Component Memory Memory Sram, 9Mbit, 3.1Ns, Tqfp-100; Memory Size Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 3.1 ns 3.1 ns 3.1 ns 3.1 ns 3.1 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F)
Package Type QFP; TQFP; 100-TQFP (14x20) 100-LQFP QFP; 100-LQFP TQFP
Supply Voltage 3.135 V ~ 3.465 V -3.3V; 3.135 3.135V ~ 3.465V 3.135V ~ 3.465V Surface Mount
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY14B104N-BA45XIT-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits
View Details
3 suppliers
SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - 24C01AI/SN - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details