Integrated Silicon Solution, Inc. Memory IS61NLP25636A-200B3I

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
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Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Memory - IS61NLP25636A-200B3I-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Memory - IS61NLP25636A-200B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NLP25636A-200B3I - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NLP25636A-200B3I
Integrated Circuits (ICs) - Memory - Memory IS61NLP25636A-200B3I
IC SRAM 9MBIT PARALLEL 165TFBGA

IC SRAM 9MBIT PARALLEL 165TFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61NLP25636A-200B3I-ND IS61NLP25636A-200B3I IS61NLP25636A-200B3I
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits
Package Type 165-TBGA BGA; 165-TBGA
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