Integrated Silicon Solution, Inc. Memory IS61NLP25636A-200B3I

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61NLP25636A-200B3I-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61NLP25636A-200B3I - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61NLP25636A-200B3I
Integrated Circuits (ICs) - Memory - Memory IS61NLP25636A-200B3I
IC SRAM 9MBIT PARALLEL 165TFBGA

IC SRAM 9MBIT PARALLEL 165TFBGA

Supplier's Site
Memory - IS61NLP25636A-200B3I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61NLP25636A-200B3I-ND IS61NLP25636A-200B3I IS61NLP25636A-200B3I
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits
Package Type 165-TBGA BGA; 165-TBGA
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