Win Source Part Number: 1002344-IS61NLP25636
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 84
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, SDR
Memory Type: Volatile
Memory Size: 9Mb (256K x 36)
Access Time: 3.1 ns
Voltage - Supply: 3.135V ~ 3.465V
Package / Case: 119-BBGA
Supplier Device Package: 119-PBGA (14x22)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Clock Frequency: 200 MHz
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS61NLP25636
IC SRAM 9MBIT PARALLEL 119PBGA Product overview: IS61NLP25636A-200B2L
IC SRAM 9MBIT PARALLEL 119PBGA
IC SRAM 9MBIT PARALLEL 119PBGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1002344-IS61NLP25636A-200B2LI | 774-IS61NLP25636A-200B2LI | IS61NLP25636A-200B2LI | IS61NLP25636A-200B2LI | IS61NLP25636A-200B2LI |
| Product Name | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 3.1 ns | 3.1 ns | 3.1 ns | 3.1 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | ||
| Supply Voltage | 3.135V ~ 3.465V | -3.3V; 3.135 | -40degC ~ 85degC (TA) | 3.135V ~ 3.465V | |
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits |