Integrated Silicon Solution, Inc. Memory IS61LV6416-10BLI-TR

Description
IC SRAM 1MBIT PARALLEL 48MINIBGA
Datasheet
Description
IC SRAM 1MBIT PARALLEL 48MINIBGA
Datasheet

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Description
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IC SRAM 1MBIT PARALLEL 48MINIBGA

IC SRAM 1MBIT PARALLEL 48MINIBGA

Supplier's Site Datasheet
Memory - IS61LV6416-10BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 48-TFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LV6416-10BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LV6416-10BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS61LV6416-10BLI-TR
IC SRAM 1MBIT PARALLEL 48TFBGA

IC SRAM 1MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61LV6416-10BLI-TR IS61LV6416-10BLI-TR IS61LV6416-10BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Density 1000 kbits 1000 kbits 1000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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