IC SRAM 4MBIT PARALLEL 44TSOP II Product overview: IS61LV5128AL-10TLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61LV5128AL-10T
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 002029-IS61LV5128AL-
Packaging: Tray
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 4Mb (512K x 8)
Access Time: 10ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 44-TSOP II
Supply Voltage - Operating: 3.135 V to 3.6 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 44-TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
SRAM, 4MBIT, 10NS, TSOP-2-44; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:3.135V to 3.6V; Memory Case Style:TSOP; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C RoHS Compliant: Yes
SRAM 4MB 512K X 8 3V 10NS, 61LV5128; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:3.135V to 3.6V; Memory Case Style:TSOP; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes
STANDARD SRAM, 512KX8, 10NS, CMOS, IND TEMP, TSOP2-44. FREE 2 YEAR RADWELL WARRANTY
IC SRAM 4MBIT PARALLEL 44TSOP II
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS61LV5128AL-10TLI | 002029-IS61LV5128AL-10TLI | 706-1038-ND | IS61LV5128AL-10TLI | IS61LV5128AL-10TLI | IS61LV5128AL-10TLI | 43M5259 | 32403993 | IS61LV5128AL-10TLI |
| Product Name | Memory IC and Storage Component | Memory - SRAM - IS61LV5128AL-10TLI | Memory | Memory | Memory | Memory | Sram, 4Mbit, 10Ns, Tsop-2-44; Memory Size Integrated Silicon Solution (Issi) | Memory IC | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | SRAM - Asynchronous; SRAM Chip | SRAM; SRAM Chip | SRAM Chip | SRAM Chip | Volatile; SRAM Chip |
| Access Time | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | |||
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | ||
| Number of Words | 512 k |
