IC SRAM 4MBIT PARALLEL 48TFBGA Product overview: IS61LV25616AL-10BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61LV25616AL-10
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189191-IS61LV25616A
Packaging: Tray
Mounting Style: SMD
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 10ns
Categories: Integrated Circuits
Supplier Device Package: 48-miniBGA (8x10)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: SRAM
Manufacturer Homepage: www.issi.com
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Manufacturer Package: 48-TFBGA
Alternative Parts (Cross-Reference): CY7C1041CV33-10BAXA;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 220
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3.135V ~ 3.6V
IC SRAM 4MBIT PARALLEL 48MINIBGA
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-TFBGA (8x10)
SRAM, 4MBIT, 10NS, MINIBGA-48; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:3.135V to 3.6V; Memory Case Style:Mini BGA; No. of Pins:48Pins; Access Time:10ns; Operating Temperature Min:-40°C RoHS Compliant: Yes
IC SRAM 4MBIT PARALLEL 48MINIBGA
IC SRAM 4MBIT PARALLEL 48TFBGA
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (8x10)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS61LV25616AL-10BLI | 1189191-IS61LV25616AL-10BLI | IS61LV25616AL-10BLI | 706-1034-ND | 43M5211 | IS61LV25616AL-10BLI | IS61LV25616AL-10BLI | IS61LV25616AL-10BLI |
| Product Name | Memory IC and Storage Component | Memory - SRAM - IS61LV25616AL-10BLI | Memory | Memory | Sram, 4Mbit, 10Ns, Minibga-48; Memory Size Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM - Asynchronous; SRAM Chip | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | |
| Number of Words | 256 k |
