Integrated Silicon Solution, Inc. Memory IS61LV12824-8BL

Description
SRAM - Asynchronous Memory IC 3Mbit Parallel 8 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Asynchronous Memory IC 3Mbit Parallel 8 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LV12824-8BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 3Mbit Parallel 8 ns 119-PBGA (14x22)

SRAM - Asynchronous Memory IC 3Mbit Parallel 8 ns 119-PBGA (14x22)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LV12824-8BL
Integrated Circuits (ICs) - Memory - Memory IS61LV12824-8BL
IC SRAM 3MBIT PARALLEL 119PBGA

IC SRAM 3MBIT PARALLEL 119PBGA

Supplier's Site
IC SRAM 3MBIT PARALLEL 119PBGA

IC SRAM 3MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61LV12824-8BL IS61LV12824-8BL IS61LV12824-8BL
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 8 ns 8 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 3000 kbits 3000 kbits 3000 kbits
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