Integrated Silicon Solution, Inc. Memory IS61LV12824-10BL-TR

Description
SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LV12824-10BL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)

SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LV12824-10BL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LV12824-10BL-TR
Integrated Circuits (ICs) - Memory - Memory IS61LV12824-10BL-TR
IC SRAM 3MBIT PARALLEL 119PBGA

IC SRAM 3MBIT PARALLEL 119PBGA

Supplier's Site
IC SRAM 3MBIT PARALLEL 119PBGA

IC SRAM 3MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61LV12824-10BL-TR IS61LV12824-10BL-TR IS61LV12824-10BL-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 3000 kbits 3000 kbits 3000 kbits
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