Integrated Silicon Solution, Inc. Memory IS61LV12824-10BL-TR

Description
SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LV12824-10BL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)

SRAM - Asynchronous Memory IC 3Mbit Parallel 10 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 3MBIT PARALLEL 119PBGA

IC SRAM 3MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LV12824-10BL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LV12824-10BL-TR
Integrated Circuits (ICs) - Memory - Memory IS61LV12824-10BL-TR
IC SRAM 3MBIT PARALLEL 119PBGA

IC SRAM 3MBIT PARALLEL 119PBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61LV12824-10BL-TR IS61LV12824-10BL-TR IS61LV12824-10BL-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 3000 kbits 3000 kbits 3000 kbits
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