The IS61LPS51236A-250B3-TR is a high-speed, low-power synchronous static RAM designed for burstable, high-performance memory applications, particularly in communication and networking. It features an organization of 524,288 words by 36 bits and operates at a frequency of 250 MHz with a clock access time of 2.6 ns. The device supports individual byte write control and global write capabilities, allowing for flexible data management. It includes a self-timed write cycle and can initiate burst sequences through ADSP or ADSC input pins. The memory also offers a snooze mode for reduced power consumption during standby and is available in multiple package options, including a 165-ball PBGA. The power supply requirements are 3.3V for LPS and 2.5V for VPS variants, with lead-free options available. This product is suitable for applications requiring efficient memory solutions with high-speed access and low power consumption.
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 250MHz 2.6ns 165-TFBGA (13x15)
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 250 MHz 2.6 ns 165-TFBGA (13x15)
IC SRAM 18MBIT PARALLEL 165TFBGA
IC SRAM 18MBIT PARALLEL 165TFBGA
| DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61LPS51236A-250B3-TR-ND | IS61LPS51236A-250B3-TR | IS61LPS51236A-250B3-TR | IS61LPS51236A-250B3-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 18000 kbits | 18000 kbits | 18000 kbits | 18000 kbits |
| Package Type | 165-TBGA | BGA; 165-TBGA | BGA |
