SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189157-IS61LPS25636
Packaging: Tray
Mounting Style: SMD
Technology: SRAM - Synchronous
Memory Type: Volatile
Memory Size: 9Mb (256K x 36)
Access Time: 3.1ns
Categories: Integrated Circuits
Supplier Device Package: 165-TFBGA (13x15)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: SRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 200MHz
Memory Interface: Parallel
Manufacturer Package: 165-TBGA
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 144
MSL Level: 2 (1 Year)
Supply Voltage (V): 3.135V ~ 3.465V
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)
IC SRAM 9MBIT PARALLEL 165TFBGA
IC SRAM 9MBIT PARALLEL 165TFBGA
| DigiKey | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61LPS25636A-200B3LI-ND | 1189157-IS61LPS25636A-200B3LI | IS61LPS25636A-200B3LI | IS61LPS25636A-200B3LI | IS61LPS25636A-200B3LI |
| Product Name | Memory | Memory - SRAM - IS61LPS25636A-200B3LI | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits | |
| Package Type | 165-TBGA | BGA; 165-TBGA | BGA |
