Integrated Silicon Solution, Inc. Memory IS61LPS25636A-200B3LI

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LPS25636A-200B3LI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61LPS25636A-200B3LI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS61LPS25636A-200B3LI
Memory IC and Storage Component 774-IS61LPS25636A-200B3LI
IC SRAM 9MBIT PARALLEL 165TFBGA Product overview: IS61LPS25636A-200B3L I from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61LPS25636A-20 0B3LI can be used for catalog matching and distributor lookup.

IC SRAM 9MBIT PARALLEL 165TFBGA Product overview: IS61LPS25636A-200B3LI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61LPS25636A-200B3LI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SRAM - IS61LPS25636A-200B3LI - 1189157-IS61LPS25636A-200B3LI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61LPS25636A-200B3LI
1189157-IS61LPS25636A-200B3LI
Memory - SRAM - IS61LPS25636A-200B3LI 1189157-IS61LPS25636A-200B3LI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 1189157-IS61LPS25636 A-200B3LI Packaging: Tray Mounting Style: SMD Technology: SRAM - Synchronous Memory Type: Volatile Memory Size: 9Mb (256K x 36) Access Time: 3.1ns Categories: Integrated Circuits Supplier Device Package: 165-TFBGA (13x15) Temperature Range - Operating: -40°C ~ 85°C Memory Format: SRAM Manufacturer Homepage: www.issi.com Clock Frequency: 200MHz Memory Interface: Parallel Manufacturer Package: 165-TBGA Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 144 MSL Level: 2 (1 Year) Supply Voltage (V): 3.135V ~ 3.465V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189157-IS61LPS25636A-200B3LI
Packaging: Tray
Mounting Style: SMD
Technology: SRAM - Synchronous
Memory Type: Volatile
Memory Size: 9Mb (256K x 36)
Access Time: 3.1ns
Categories: Integrated Circuits
Supplier Device Package: 165-TFBGA (13x15)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: SRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 200MHz
Memory Interface: Parallel
Manufacturer Package: 165-TBGA
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 144
MSL Level: 2 (1 Year)
Supply Voltage (V): 3.135V ~ 3.465V

Buy Now
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LPS25636A-200B3LI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LPS25636A-200B3LI
Integrated Circuits (ICs) - Memory - Memory IS61LPS25636A-200B3LI
IC SRAM 9MBIT PARALLEL 165TFBGA

IC SRAM 9MBIT PARALLEL 165TFBGA

Supplier's Site
IC SRAM 9MBIT PARALLEL 165TFBGA

IC SRAM 9MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61LPS25636A-200B3LI-ND 774-IS61LPS25636A-200B3LI 1189157-IS61LPS25636A-200B3LI IS61LPS25636A-200B3LI IS61LPS25636A-200B3LI IS61LPS25636A-200B3LI
Product Name Memory Memory IC and Storage Component Memory - SRAM - IS61LPS25636A-200B3LI Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 165-TBGA BGA; 165-TBGA BGA
Supply Voltage 3.135V ~ 3.465V -3.3V; 3.135 3.135V ~ 3.465V 3.135V ~ 3.465V -40degC ~ 85degC (TA)
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4 suppliers