Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 124070-IS61LPS25636A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SRAM - Synchronous
Memory Type: Volatile
Memory Size: 9Mb (256K x 36)
Access Time: 3.1ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 165-TFBGA (13x15)
Supply Voltage - Operating: 3.135 V to 3.465 V
Memory Format: SRAM
Max Frequency: 200MHz
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
IC SRAM 9MBIT PARALLEL 165TFBGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)
IC SRAM 9MBIT PARALLEL 165TFBGA
| Win Source Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 124070-IS61LPS25636A-200B3LI-TR | IS61LPS25636A-200B3LI-TR-ND | IS61LPS25636A-200B3LI-TR | IS61LPS25636A-200B3LI-TR | IS61LPS25636A-200B3LI-TR |
| Product Name | Memory - SRAM - IS61LPS25636A-200B3LI-TR | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 3.1 ns | 3.1 ns | 3.1 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Package Type | BGA; 165-TFBGA (13x15) | 165-TBGA | BGA; 165-TBGA |
