Integrated Silicon Solution, Inc. Memory IS61LPS25636A-200B3LI-TR

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LPS25636A-200B3LI-TR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15)

Buy Now Datasheet
Memory - SRAM - IS61LPS25636A-200B3LI-TR - 124070-IS61LPS25636A-200B3LI-TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - IS61LPS25636A-200B3LI-TR
124070-IS61LPS25636A-200B3LI-TR
Memory - SRAM - IS61LPS25636A-200B3LI-TR 124070-IS61LPS25636A-200B3LI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 124070-IS61LPS25636A -200B3LI-TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: SRAM - Synchronous Memory Type: Volatile Memory Size: 9Mb (256K x 36) Access Time: 3.1ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 165-TFBGA (13x15) Supply Voltage - Operating: 3.135 V to 3.465 V Memory Format: SRAM Max Frequency: 200MHz Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 124070-IS61LPS25636A-200B3LI-TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SRAM - Synchronous
Memory Type: Volatile
Memory Size: 9Mb (256K x 36)
Access Time: 3.1ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 165-TFBGA (13x15)
Supply Voltage - Operating: 3.135 V to 3.465 V
Memory Format: SRAM
Max Frequency: 200MHz
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 200 MHz 3.1 ns 165-TFBGA (13x15)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 165TFBGA

IC SRAM 9MBIT PARALLEL 165TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LPS25636A-200B3LI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LPS25636A-200B3LI-TR
Integrated Circuits (ICs) - Memory - Memory IS61LPS25636A-200B3LI-TR
IC SRAM 9MBIT PARALLEL 165TFBGA

IC SRAM 9MBIT PARALLEL 165TFBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61LPS25636A-200B3LI-TR-ND 124070-IS61LPS25636A-200B3LI-TR IS61LPS25636A-200B3LI-TR IS61LPS25636A-200B3LI-TR IS61LPS25636A-200B3LI-TR
Product Name Memory Memory - SRAM - IS61LPS25636A-200B3LI-TR Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 165-TBGA BGA; 165-TFBGA (13x15) BGA; 165-TBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C01-I/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - MYXxxSMS01GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details