Integrated Silicon Solution, Inc. Memory IS61LF51236A-7.5TQI

Description
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 117MHz 7.5ns 100-LQFP (14x20)
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Description
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 117MHz 7.5ns 100-LQFP (14x20)
Request a Quote
Datasheet
Datasheet Summary
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The IS61LF51236A-7.5TQI is a high-speed, low-power synchronous static RAM with a capacity of 512K x 36 bits, designed for communication and networking applications. It features an access time of 7.5 ns and operates at a frequency of 117 MHz. The device supports individual byte write control and global write capabilities, allowing for flexible data handling. It includes a self-timed write cycle and can initiate burst sequences through ADSP or ADSC input pins. The memory is available in a 100-pin TQFP package and is compliant with lead-free standards. Power supply requirements are VDD at 3.3V ± 5% and VDDQ at 2.5V or 3.3V ± 5%. The IS61LF51236A-7.5TQI is suitable for applications requiring efficient memory performance with reduced power consumption.

Datasheet Summary
Powered by GS/AI

The IS61LF51236A-7.5TQI is a high-speed, low-power synchronous static RAM with a capacity of 512K x 36 bits, designed for communication and networking applications. It features an access time of 7.5 ns and operates at a frequency of 117 MHz. The device supports individual byte write control and global write capabilities, allowing for flexible data handling. It includes a self-timed write cycle and can initiate burst sequences through ADSP or ADSC input pins. The memory is available in a 100-pin TQFP package and is compliant with lead-free standards. Power supply requirements are VDD at 3.3V ± 5% and VDDQ at 2.5V or 3.3V ± 5%. The IS61LF51236A-7.5TQI is suitable for applications requiring efficient memory performance with reduced power consumption.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61LF51236A-7.5TQI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 117MHz 7.5ns 100-LQFP (14x20)

SRAM - Synchronous, SDR Memory IC 18Mb (512K x 36) Parallel 117MHz 7.5ns 100-LQFP (14x20)

Buy Now Datasheet
Memory - IS61LF51236A-7.5TQI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 100-LQFP (14x20)

SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 117 MHz 7.5 ns 100-LQFP (14x20)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61LF51236A-7.5TQI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61LF51236A-7.5TQI
Integrated Circuits (ICs) - Memory - Memory IS61LF51236A-7.5TQI
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site
IC SRAM 18MBIT PARALLEL 100TQFP

IC SRAM 18MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61LF51236A-7.5TQI-ND IS61LF51236A-7.5TQI IS61LF51236A-7.5TQI IS61LF51236A-7.5TQI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 18000 kbits 18000 kbits 18000 kbits 18000 kbits
Package Type 100-LQFP QFP; 100-LQFP QFP
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