Integrated Silicon Solution, Inc. 18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) IS61DDP2B41M18A-400M3L

Description
18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
Datasheet
Description
18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) - 77T0716 - Newark, An Avnet Company
Chicago, IL, United States
18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi)
77T0716
18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) 77T0716
18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS

18Mb, DDR IIP (Burst of 4) CIO, Sync SRAM, 1M x 18, 2.0 Read Latency, 165 Ball FBGA (15x17 mm), RoHS

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - IS61DDP2B41M18A-400M3L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61DDP2B41M18A-400M3L
Integrated Circuits (ICs) - Memory - Memory IS61DDP2B41M18A-400M3L
IC SRAM 18MBIT PARALLEL 165LFBGA

IC SRAM 18MBIT PARALLEL 165LFBGA

Supplier's Site
IC SRAM 18MBIT PARALLEL 165LFBGA

IC SRAM 18MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
SRAM - Synchronous, DDR IIP Memory IC 18Mbit Parallel 400 MHz 165-LFBGA (15x17)

SRAM - Synchronous, DDR IIP Memory IC 18Mbit Parallel 400 MHz 165-LFBGA (15x17)

Buy Now Datasheet

Technical Specifications

  Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 77T0716 IS61DDP2B41M18A-400M3L IS61DDP2B41M18A-400M3L IS61DDP2B41M18A-400M3L
Product Name 18Mb, Ddr Iip (Burst Of 4) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Data Rate 400 MHz
Density 18000 kbits 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY14B104NA-BA25IT - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 25 ns
Density 4000 kbits
View Details
2 suppliers
Memory - 71V2556SA133BQI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details