Integrated Silicon Solution, Inc. Memory IS61DDB22M36A-300M3L

Description
IC SRAM 72MBIT PARALLEL 165LFBGA
Description
IC SRAM 72MBIT PARALLEL 165LFBGA
Datasheet
Datasheet Summary
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The IS61DDB22M36A-300M3L is a 72Mb synchronous CMOS static random access memory (SRAM) device featuring a double data rate (DDR) interface. It operates at a clock speed of 300 MHz and is organized in a 2Mx36 configuration. The device supports a common I/O bus for read and write operations, utilizing a self-timed late write mechanism and a fixed 2-bit burst mode. This SRAM includes an on-chip delay-locked loop (DLL) to enhance data validity and offers clock stop support. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 15mm x 17mm with 165 balls. The IS61DDB22M36A-300M3L is suitable for applications requiring high-speed memory access and efficient data handling, making it a viable option for engineers looking for reliable SRAM solutions in their designs.

Datasheet Summary
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The IS61DDB22M36A-300M3L is a 72Mb synchronous CMOS static random access memory (SRAM) device featuring a double data rate (DDR) interface. It operates at a clock speed of 300 MHz and is organized in a 2Mx36 configuration. The device supports a common I/O bus for read and write operations, utilizing a self-timed late write mechanism and a fixed 2-bit burst mode. This SRAM includes an on-chip delay-locked loop (DLL) to enhance data validity and offers clock stop support. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 15mm x 17mm with 165 balls. The IS61DDB22M36A-300M3L is suitable for applications requiring high-speed memory access and efficient data handling, making it a viable option for engineers looking for reliable SRAM solutions in their designs.

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 72MBIT PARALLEL 165LFBGA

IC SRAM 72MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61DDB22M36A-300M3L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61DDB22M36A-300M3L
Integrated Circuits (ICs) - Memory - Memory IS61DDB22M36A-300M3L
IC SRAM 72MBIT PARALLEL 165LFBGA

IC SRAM 72MBIT PARALLEL 165LFBGA

Supplier's Site
Memory - IS61DDB22M36A-300M3L - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, DDR II Memory IC 72Mbit Parallel 300 MHz 165-LFBGA (15x17)

SRAM - Synchronous, DDR II Memory IC 72Mbit Parallel 300 MHz 165-LFBGA (15x17)

Buy Now Datasheet
72Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) - 77T0689 - Newark, An Avnet Company
Chicago, IL, United States
72Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi)
77T0689
72Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) 77T0689
72Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 36, 165 Ball FBGA (15x17 mm), RoHS

72Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 36, 165 Ball FBGA (15x17 mm), RoHS

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61DDB22M36A-300M3L IS61DDB22M36A-300M3L IS61DDB22M36A-300M3L 77T0689
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory 72Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi)
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM Chip
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