The IS61DDB22M36A-300M3L is a 72Mb synchronous CMOS static random access memory (SRAM) device featuring a double data rate (DDR) interface. It operates at a clock speed of 300 MHz and is organized in a 2Mx36 configuration. The device supports a common I/O bus for read and write operations, utilizing a self-timed late write mechanism and a fixed 2-bit burst mode. This SRAM includes an on-chip delay-locked loop (DLL) to enhance data validity and offers clock stop support. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 15mm x 17mm with 165 balls. The IS61DDB22M36A-300M3L is suitable for applications requiring high-speed memory access and efficient data handling, making it a viable option for engineers looking for reliable SRAM solutions in their designs.
IC SRAM 72MBIT PARALLEL 165LFBGA
72Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 36, 165 Ball FBGA (15x17 mm), RoHS
IC SRAM 72MBIT PARALLEL 165LFBGA
SRAM - Synchronous, DDR II Memory IC 72Mbit Parallel 300 MHz 165-LFBGA (15x17)
| Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61DDB22M36A-300M3L | 77T0689 | IS61DDB22M36A-300M3L | IS61DDB22M36A-300M3L |
| Product Name | Integrated Circuits (ICs) - Memory - Memory | 72Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 36, 165 Ball Fbga (15X17 Mm), Rohs Integrated Silicon Solution (Issi) | Memory | Memory |
| Memory Category | Volatile; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
