The IS61DDB22M36A-300B4LI is a 72Mb synchronous CMOS static random access memory (SRAM) device with a 2Mx36 configuration. It operates at a clock speed of 300 MHz and features a double data rate (DDR) interface for both read and write operations. The device supports a common I/O bus and includes an on-chip delay-locked loop (DLL) to enhance data validity. This SRAM supports self-timed late write operations and has registered addresses, write and read controls, and byte write capabilities. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL input and output interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 13mm x 15mm with 165 balls. Engineers may find this product suitable for applications requiring high-speed memory with efficient data handling and flexibility in write operations. The industrial temperature range of -40¬8C to +85¬8C further enhances its applicability in various environments.
IC SRAM 72MBIT PARALLEL 165LFBGA
SRAM - Synchronous, DDR II Memory IC 72Mbit Parallel 300 MHz 165-LFBGA (13x15)
72Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 36, 165 Ball FBGA (13x15 mm), RoHS
IC SRAM 72MBIT PARALLEL 165LFBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS61DDB22M36A-300B4LI | IS61DDB22M36A-300B4LI | 18W6943 | IS61DDB22M36A-300B4LI |
| Product Name | Memory | Memory | 72Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 36, 165 Ball Fbga (13X15 Mm), Rohs Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM; SRAM Chip | SRAM; SRAM Chip | SRAM Chip | Volatile; SRAM Chip |
