Integrated Silicon Solution, Inc. Memory IS61DDB22M36A-300B4LI

The IS61DDB22M36A-300B4LI is a 72Mb synchronous CMOS static random access memory (SRAM) device with a 2Mx36 configuration. It operates at a clock speed of 300 MHz and features a double data rate (DDR) interface for both read and write operations. The device supports a common I/O bus and includes an on-chip delay-locked loop (DLL) to enhance data validity. This SRAM supports self-timed late write operations and has registered addresses, write and read controls, and byte write capabilities. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL input and output interfaces. The device is packaged in a fine ball grid array (FBGA) format, measuring 13mm x 15mm with 165 balls. Engineers may find this product suitable for applications requiring high-speed memory with efficient data handling and flexibility in write operations. The industrial temperature range of -40°C to +85°C further enhances its applicability in various environments.