Integrated Silicon Solution, Inc. Memory IS61DDB22M18C-250B4LI

Description
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (13x15)
Datasheet
Description
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (13x15)
Datasheet

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Description
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SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS61DDB22M18C-250B4LI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS61DDB22M18C-250B4LI
Integrated Circuits (ICs) - Memory IS61DDB22M18C-250B4LI
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61DDB22M18C-250B4LI IS61DDB22M18C-250B4LI IS61DDB22M18C-250B4LI
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 8.4 ns 8.4 ns 8.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 36000 kbits 36000 kbits 36000 kbits
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