Integrated Silicon Solution, Inc. Memory IS61DDB22M18A-250B4LI

Description
SRAM - Synchronous, DDR II Memory IC 36Mb (2M x 18) Parallel 250MHz 8.4ns 165-LFBGA (13x15)
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Description
SRAM - Synchronous, DDR II Memory IC 36Mb (2M x 18) Parallel 250MHz 8.4ns 165-LFBGA (13x15)
Request a Quote
Datasheet
Datasheet Summary
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The IS61DDB22M18A-250B4LI is a 36Mb synchronous static random access memory (SRAM) device from Quarktwin Technology Ltd., featuring a 2Mx18 configuration. It operates at a clock speed of 250 MHz and utilizes a double data rate (DDR) interface for efficient read and write operations. The device supports a common I/O bus and includes an on-chip delay-locked loop (DLL) to enhance data validity. This SRAM is designed for high-performance applications, with self-timed internal operations and registered addresses for read and write controls. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The package is a fine ball grid array (FBGA) with dimensions of 13mm x 15mm and includes 165 balls. The device also features byte write capabilities, boundary scan support using JTAG functions, and programmable impedance output drivers. It is suitable for industrial applications with an operating temperature range of -40¬8C to +85¬8C.

Datasheet Summary
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The IS61DDB22M18A-250B4LI is a 36Mb synchronous static random access memory (SRAM) device from Quarktwin Technology Ltd., featuring a 2Mx18 configuration. It operates at a clock speed of 250 MHz and utilizes a double data rate (DDR) interface for efficient read and write operations. The device supports a common I/O bus and includes an on-chip delay-locked loop (DLL) to enhance data validity. This SRAM is designed for high-performance applications, with self-timed internal operations and registered addresses for read and write controls. It operates with a core power supply of +1.8V and a VDDQ range of 1.5V to 1.8V, making it compatible with HSTL I/O interfaces. The package is a fine ball grid array (FBGA) with dimensions of 13mm x 15mm and includes 165 balls. The device also features byte write capabilities, boundary scan support using JTAG functions, and programmable impedance output drivers. It is suitable for industrial applications with an operating temperature range of -40¬8C to +85¬8C.

Suppliers

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Product
Description
Supplier Links
Memory - IS61DDB22M18A-250B4LI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, DDR II Memory IC 36Mb (2M x 18) Parallel 250MHz 8.4ns 165-LFBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mb (2M x 18) Parallel 250MHz 8.4ns 165-LFBGA (13x15)

Buy Now Datasheet
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 8.4 ns 165-LFBGA (13x15)

Buy Now Datasheet
36Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 18, 165 Ball Fbga (13X15 Mm), Rohs Integrated Silicon Solution (Issi) - 18W6942 - Newark, An Avnet Company
Chicago, IL, United States
36Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 18, 165 Ball Fbga (13X15 Mm), Rohs Integrated Silicon Solution (Issi)
18W6942
36Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 18, 165 Ball Fbga (13X15 Mm), Rohs Integrated Silicon Solution (Issi) 18W6942
36Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 18, 165 Ball FBGA (13x15 mm), RoHS

36Mb, DDR II (Burst of 2) CIO, Sync SRAM, 2M x 18, 165 Ball FBGA (13x15 mm), RoHS

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - IS61DDB22M18A-250B4LI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61DDB22M18A-250B4LI
Integrated Circuits (ICs) - Memory - Memory IS61DDB22M18A-250B4LI
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61DDB22M18A-250B4LI-ND IS61DDB22M18A-250B4LI IS61DDB22M18A-250B4LI 18W6942 IS61DDB22M18A-250B4LI
Product Name Memory Memory Memory 36Mb, Ddr Ii (Burst Of 2) Cio, Sync Sram, 2M X 18, 165 Ball Fbga (13X15 Mm), Rohs Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 36000 kbits 36000 kbits 36000 kbits 36000 kbits
Package Type 165-LBGA BGA; 165-LBGA BGA
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