Integrated Silicon Solution, Inc. Memory IS61DDB21M36C-300M3L

Description
IC SRAM 36MBIT PARALLEL 165LFBGA
Datasheet
Description
IC SRAM 36MBIT PARALLEL 165LFBGA
Datasheet

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IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
Memory - IS61DDB21M36C-300M3L - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 8.4 ns 165-LFBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 300 MHz 8.4 ns 165-LFBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS61DDB21M36C-300M3L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS61DDB21M36C-300M3L
Integrated Circuits (ICs) - Memory IS61DDB21M36C-300M3L
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61DDB21M36C-300M3L IS61DDB21M36C-300M3L IS61DDB21M36C-300M3L
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 8.4 ns 8.4 ns 8.4 ns
Density 36000 kbits 36000 kbits 36000 kbits
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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