Integrated Silicon Solution, Inc. Memory IS61DDB21M36-250M3

Description
SRAM - Synchronous, DDR II Memory IC 36Mb (1M x 36) Parallel 250MHz 165-LFBGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, DDR II Memory IC 36Mb (1M x 36) Parallel 250MHz 165-LFBGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61DDB21M36-250M3-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, DDR II Memory IC 36Mb (1M x 36) Parallel 250MHz 165-LFBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mb (1M x 36) Parallel 250MHz 165-LFBGA (13x15)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS61DDB21M36-250M3 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS61DDB21M36-250M3
Memory IC and Storage Component 774-IS61DDB21M36-250M3
IC SRAM 36MBIT PARALLEL 165LFBGA Product overview: IS61DDB21M36-250M3 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61DDB21M36-250 M3 can be used for catalog matching and distributor lookup.

IC SRAM 36MBIT PARALLEL 165LFBGA Product overview: IS61DDB21M36-250M3 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS61DDB21M36-250M3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1019770-IS61DDB21M36-250M3 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1019770-IS61DDB21M36-250M3
Integrated Circuits (ICs) - Memory 1019770-IS61DDB21M36-250M3
Win Source Part Number: 1019770-IS61DDB21M36 -250M3 Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 105 Mounting: SMD (SMT) Technology: SRAM - Synchronous, DDR II Memory Type: Volatile Memory Size: 36Mb (1M x 36) Voltage - Supply: 1.71V ~ 1.89V Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (13x15) Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Clock Frequency: 250 MHz Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 54 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: ISSI, Integrated Silicon Solution Inc

Win Source Part Number: 1019770-IS61DDB21M36-250M3
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 105
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, DDR II
Memory Type: Volatile
Memory Size: 36Mb (1M x 36)
Voltage - Supply: 1.71V ~ 1.89V
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (13x15)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Clock Frequency: 250 MHz
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 54 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: ISSI, Integrated Silicon Solution Inc

Buy Now Datasheet
Memory - IS61DDB21M36-250M3 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 165-LFBGA (13x15)

SRAM - Synchronous, DDR II Memory IC 36Mbit Parallel 250 MHz 165-LFBGA (13x15)

Buy Now Datasheet
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61DDB21M36-250M3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61DDB21M36-250M3
Integrated Circuits (ICs) - Memory - Memory IS61DDB21M36-250M3
IC SRAM 36MBIT PARALLEL 165LFBGA

IC SRAM 36MBIT PARALLEL 165LFBGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS61DDB21M36-250M3-ND 774-IS61DDB21M36-250M3 1019770-IS61DDB21M36-250M3 IS61DDB21M36-250M3 IS61DDB21M36-250M3 IS61DDB21M36-250M3
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 36000 kbits 36000 kbits 36000 kbits 36000 kbits
Package Type 165-LBGA BGA; Tray BGA; 165-LBGA BGA
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