Integrated Silicon Solution, Inc. Memory IS49RL36160-125FBLI

Description
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)
Datasheet
Description
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)
Datasheet

Suppliers

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Description
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Memory - IS49RL36160-125FBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS49RL36160-125FBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49RL36160-125FBLI
Integrated Circuits (ICs) - Memory IS49RL36160-125FBLI
IS49RL36160-125FBLI

IS49RL36160-125FBLI

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number IS49RL36160-125FBLI IS49RL36160-125FBLI
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 8 ns 8 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 576000 kbits 576000 kbits
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