Integrated Silicon Solution, Inc. Memory IS49RL36160-125FBLI

Description
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)
Datasheet
Description
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49RL36160-125FBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS49RL36160-125FBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49RL36160-125FBLI
Integrated Circuits (ICs) - Memory IS49RL36160-125FBLI
IS49RL36160-125FBLI

IS49RL36160-125FBLI

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number IS49RL36160-125FBLI IS49RL36160-125FBLI
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 8 ns 8 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Density 576000 kbits 576000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Flash Memory - 1882878P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - MYXxxSMS01GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details