Integrated Silicon Solution, Inc. Memory IS49RL36160-125FBL

Description
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)
Datasheet
Description
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49RL36160-125FBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 576Mbit Parallel 800 MHz 8 ns 168-FBGA (13.5x13.5)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS49RL36160-125FBL
Integrated Circuits (ICs) - Memory - Memory IS49RL36160-125FBL
IC DRAM 576MBIT PAR 168FBGA

IC DRAM 576MBIT PAR 168FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number IS49RL36160-125FBL IS49RL36160-125FBL
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 8 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 576000 kbits 576000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882749 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - 10422DCQR - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
Memory - 71256S85DB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 85 ns
Density 256 kbits
View Details