Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS49RL18640-107EBLI

Description
RLDRAM3 Memory, 1.15Gbit, x18, C
Datasheet
Description
RLDRAM3 Memory, 1.15Gbit, x18, C
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS49RL18640-107EBLI
Integrated Circuits (ICs) - Memory - Memory IS49RL18640-107EBLI
RLDRAM3 Memory, 1.15Gbit, x18, C

RLDRAM3 Memory, 1.15Gbit, x18, C

Supplier's Site
Memory - IS49RL18640-107EBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 3 Memory IC 1.152Gbit Parallel 933 MHz 8 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 1.152Gbit Parallel 933 MHz 8 ns 168-FBGA (13.5x13.5)

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS49RL18640-107EBLI IS49RL18640-107EBLI
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 8 ns
Density 64000 kbits 1152000 kbits
Supply Voltage Surface Mount 1.28V ~ 1.42V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 05523-770/0001 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details