Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS49RL18640-107EBLI

Description
RLDRAM3 Memory, 1.15Gbit, x18, C
Datasheet
Description
RLDRAM3 Memory, 1.15Gbit, x18, C
Datasheet

Suppliers

Company
Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS49RL18640-107EBLI
Integrated Circuits (ICs) - Memory - Memory IS49RL18640-107EBLI
RLDRAM3 Memory, 1.15Gbit, x18, C

RLDRAM3 Memory, 1.15Gbit, x18, C

Supplier's Site
Memory - IS49RL18640-107EBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 3 Memory IC 1.152Gbit Parallel 933 MHz 8 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 1.152Gbit Parallel 933 MHz 8 ns 168-FBGA (13.5x13.5)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS49RL18640-107EBLI IS49RL18640-107EBLI
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 8 ns
Density 64000 kbits 1152000 kbits
Supply Voltage Surface Mount 1.28V ~ 1.42V
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