Integrated Silicon Solution, Inc. Memory IS49NLS96400A-33WBL

Description
IC DRAM 576MBIT PAR 144TWBGA
Datasheet
Description
IC DRAM 576MBIT PAR 144TWBGA
Datasheet

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Description
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IC DRAM 576MBIT PAR 144TWBGA

IC DRAM 576MBIT PAR 144TWBGA

Supplier's Site Datasheet
Memory - IS49NLS96400A-33WBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS49NLS96400A-33WBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS96400A-33WBL
Integrated Circuits (ICs) - Memory IS49NLS96400A-33WBL
IC DRAM 576MBIT PAR 144TWBGA

IC DRAM 576MBIT PAR 144TWBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLS96400A-33WBL IS49NLS96400A-33WBL IS49NLS96400A-33WBL
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Density 576000 kbits 576000 kbits 576000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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