Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS49NLS96400A-18WBLI

Description
RLDRAM2 Memory, 576Mbit, x9, Sep
Description
RLDRAM2 Memory, 576Mbit, x9, Sep
Datasheet
Datasheet Summary
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The IS49NLS96400A-18WBLI is a 576Mb RLDRAM 2 memory device from Quarktwin Technology Ltd., featuring a 64M x 9 organization. It operates at a clock frequency of 533 MHz, providing a data rate of 1.067 Gb/s per pin and a peak bandwidth of 38.4 Gb/s. The device has a reduced cycle time of 15 ns and supports a 32 ms refresh cycle with 8 internal banks. It utilizes a non-multiplexed address interface and offers programmable read latency, row cycle time, and burst sequence length, which can optimize data bus utilization. The memory operates with HSTL I/O levels at nominal voltages of 1.5V or 1.8V, and features on-die termination. The IS49NLS96400A-18WBLI is packaged in a 144-ball lead-free WBGA configuration and is suitable for commercial applications with an operating temperature range of 0¬8C to +95¬8C.

Datasheet Summary
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The IS49NLS96400A-18WBLI is a 576Mb RLDRAM 2 memory device from Quarktwin Technology Ltd., featuring a 64M x 9 organization. It operates at a clock frequency of 533 MHz, providing a data rate of 1.067 Gb/s per pin and a peak bandwidth of 38.4 Gb/s. The device has a reduced cycle time of 15 ns and supports a 32 ms refresh cycle with 8 internal banks. It utilizes a non-multiplexed address interface and offers programmable read latency, row cycle time, and burst sequence length, which can optimize data bus utilization. The memory operates with HSTL I/O levels at nominal voltages of 1.5V or 1.8V, and features on-die termination. The IS49NLS96400A-18WBLI is packaged in a 144-ball lead-free WBGA configuration and is suitable for commercial applications with an operating temperature range of 0¬8C to +95¬8C.

Suppliers

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Product
Description
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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS49NLS96400A-18WBLI
Integrated Circuits (ICs) - Memory - Memory IS49NLS96400A-18WBLI
RLDRAM2 Memory, 576Mbit, x9, Sep

RLDRAM2 Memory, 576Mbit, x9, Sep

Supplier's Site
Memory - IS49NLS96400A-18WBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit HSTL 533 MHz 15 ns 144-TWBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit HSTL 533 MHz 15 ns 144-TWBGA (11x18.5)

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Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS49NLS96400A-18WBLI IS49NLS96400A-18WBLI
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Cycle Time 15 ns
Density 576000 kbits 576000 kbits
Package Type 533 MHz BGA; 144-TFBGA
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