The IS49NLS96400-25B is a 576Mb RLDRAM 2 memory device from Quarktwin Technology Ltd., featuring a 400MHz DDR operation with a data rate of 800Mb/s per pin. It offers a peak bandwidth of 14.4 Gb/s when configured as x18 Separate I/O. The memory has a reduced cycle time of 15ns at 400MHz and includes 8 internal banks, allowing for efficient data management. This device supports a programmable READ latency, row cycle time, and burst sequence length, optimizing data bus utilization with balanced READ and WRITE latencies. It operates with a supply voltage of 2.5V for VEXT and 1.8V or 1.5V for VDDQ I/O, and features on-die termination. The package is a 144-ball WBGA, lead-free, suitable for commercial and industrial temperature ranges. Engineers considering this memory IC should note its compatibility with SRAM-type interfaces and its differential input clocking capabilities, which enhance performance in high-speed applications.
IC DRAM 576MBIT PAR 144FCBGA
RLDRAM 2 Memory IC 576Mbit Parallel 400 MHz 20 ns 144-FCBGA (11x18.5)
| Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | IS49NLS96400-25B | IS49NLS96400-25B |
| Product Name | Memory | Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns |
| Density | 576000 kbits | 576000 kbits |
