Integrated Silicon Solution, Inc. Memory IS49NLS18320-33BL

Description
RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet
Description
RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS49NLS18320-33BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 576Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS49NLS18320-33BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS18320-33BL
Integrated Circuits (ICs) - Memory IS49NLS18320-33BL
IC DRAM 576MBIT PAR 144FCBGA

IC DRAM 576MBIT PAR 144FCBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLS18320-33BL IS49NLS18320-33BL IS49NLS18320-33BL
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 576000 kbits 576000 kbits 576000 kbits
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