Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS49NLS18160-33WBLI

Description
IC DRAM 288MBIT PAR 144TWBGA
Datasheet
Description
IC DRAM 288MBIT PAR 144TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS49NLS18160-33WBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS18160-33WBLI
Integrated Circuits (ICs) - Memory IS49NLS18160-33WBLI
IC DRAM 288MBIT PAR 144TWBGA

IC DRAM 288MBIT PAR 144TWBGA

Supplier's Site
Memory - IS49NLS18160-33WBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-TWBGA (11x18.5)

Buy Now Datasheet
IC DRAM 288MBIT PAR 144TWBGA

IC DRAM 288MBIT PAR 144TWBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLS18160-33WBLI IS49NLS18160-33WBLI IS49NLS18160-33WBLI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 300 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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