Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS49NLS18160-33BLI

Description
IC DRAM 288MBIT PAR 144FCBGA
Datasheet
Description
IC DRAM 288MBIT PAR 144FCBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS49NLS18160-33BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS18160-33BLI
Integrated Circuits (ICs) - Memory IS49NLS18160-33BLI
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site Datasheet
Memory - IS49NLS18160-33BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLS18160-33BLI IS49NLS18160-33BLI IS49NLS18160-33BLI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 300 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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