Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS49NLS18160-33BLI

Description
IC DRAM 288MBIT PAR 144FCBGA
Datasheet
Description
IC DRAM 288MBIT PAR 144FCBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS49NLS18160-33BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS49NLS18160-33BLI
Integrated Circuits (ICs) - Memory IS49NLS18160-33BLI
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site
Memory - IS49NLS18160-33BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)

Buy Now Datasheet
IC DRAM 288MBIT PAR 144FCBGA

IC DRAM 288MBIT PAR 144FCBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS49NLS18160-33BLI IS49NLS18160-33BLI IS49NLS18160-33BLI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 300 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Specs
Memory Category EEPROM
View Details
Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details
Memory - A2C00064358 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers