RLDRAM 2 Memory IC 288Mbit Parallel 300 MHz 20 ns 144-FCBGA (11x18.5)
IC DRAM 288MBIT PAR 144FCBGA
IC DRAM 288MBIT PAR 144FCBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS49NLS18160-33BL | IS49NLS18160-33BL | IS49NLS18160-33BL |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 288000 kbits | 288000 kbits | 288000 kbits |
